As a new generation compound semiconductor technology, GaAs (gallium arsenide) and GaN (gallium nitride) is being adopted quickly by RF Power applications with demanding performance requirement. Based on advanced and stable GaAs and GaN process lines at home and abroad, ZONKY has strong design, development and mass production capacity of products in the DC-110G frequency range, such as low noise amplifiers, ultra-wideband power amplifiers, high linear power amplifiers, and high power GaN die, high-power internal matched tube amplifiers (IMFETs), phase shifters, frequency multipliers, mixers, VCOs and other microwave and millimeter wave integrated chip circuits.