SiC IGBT

Insulated gate bipolar transistors (IGBTs) are the most used power electronic components in industrial applications, offering the fast switching of electric currents to achieve low switching losses. ZONKY's IGBTs adopt silicon carbide (SiC) technology. SiC devices offer a number of attractive charcteristics for high voltage power semiconductors when compared to commonly used Silicon (Si). ZONKY’s silicon carbide semiconductors deliver fast switching speed, low forward drop, and temperature stability, enabling a range of high-power and high-voltage applications. Our selection of SiC Schottky barrier diodes and SiC MOSFETs provide ruggedness, reliability, and wider bandgap, making them ideal for renewable energy systems and industrial automation.
ZONKY’s IGBT product portfolio provides a broad variety of different devices for a wide range of applications in the fields of automotive, traction, energy transmission, industrial, and consumer systems. These solutions offer very low power losses in the forward and blocking state, only require low drive power, and have a high efficiency. Select the right IGBT solution for your needs from ZONKY’s extensive portfolio.